2SB828 transistors equivalent, pnp/npn epitaxial planar silicon transistors.
* Low-saturation collector-to-emitter voltage : VCE(sat)=
–0.5V(PNP), 0.4V(NPN) max.
* Wide ASO leading to high resistance to breakdown.
Package D.
Applications
* Relay drivers, high-speed inverters, converters, and other general high-current switching applicatio.
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